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| inchange semiconductor product specification silicon pnp power transistors BD136 bd138 bd140 description ? ? with to-126 package ? high current ?complement to type bd135/137/139 applications ? driver stages in high-fidelity amplifiers and television circuits pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD136 -45 bd138 -60 v cbo collector-base voltage bd140 open emitter -100 v BD136 -45 bd138 -60 v ceo collector-emitter voltage bd140 open base -100 v v ebo emitter -base voltage open collector -5 v i c collector current (dc) -1.5 a i cm collector current-peak -2 a i bm base current-peak -1 a p t total power dissipation t mb ?70 ?? 8 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? t amb operating ambient te mperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 100 k/w r th j-mb thermal resistance from junction to mounting base 10 k/w
inchange semiconductor product specification 2 silicon pnp power transistors BD136 bd138 bd140 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-0.5a; i b =-50ma -0.5 v v be base-emitter voltage i c =-500ma ; v ce =-2v -1.0 v v cb =-30v; i e =0 -100 na i cbo collector cut-off current v cb =-30v; i e =0 t j =125 ?? -10 | a i ebo emitter cut-off current v eb =-5v; i c =0 -100 na h fe-1 dc current gain i c =-5ma ; v ce =-2v 40 h fe-2 dc current gain BD136-10;bd138-10;bd140-10 BD136-16;bd138-16;bd140-16 i c =-150ma ; v ce =-2v 63 63 100 250 160 250 h fe-3 dc current gain i c =-500ma ; v ce =-2v 25 f t transition frequency i c =-50ma; v ce =-5v ;f=100mhz 160 mhz inchange semiconductor product specification 3 silicon pnp power transistors BD136 bd138 bd140 package outline fig.2 outline dimensions |
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